Resistive read-out and built-in amplification: two key innovations to achieve 4D tracking with silicon sensors

by nicolo cartiglia (INFN)

Thursday 14 Dec 2023, 15:00 → 17:00 US/Eastern

small seminar room

REMOTE:  https://cern.zoom.us/j/7111745992

In the past few years, two design innovations have radically changed the performance of silicon detectors and turned silicon sensors into high-resolution timing detectors, fit to meet the very demanding requirements of future 4D trackers. In this presentation, I will review the performance improvements that these two design innovations, low-gain (LGAD) and resistive read-out (RSD), have brought to silicon sensors. Due to the LGAD mechanism, large signals lead to improved temporal precision, while charge sharing, due to the RSD design, has removed the need for very small pixels to achieve excellent spatial precision. LGAD- and RSD-based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. In the final part of the presentation, I will show how the introduction of multiple sampling front-end electronics and reconstruction methods based on machine learning can further improve the performances of future 4D trackers.

BNL_Cartiglia_Dec2023.pptx