Speaker
Zachary Galloway
(SCIPP, UCSC)
Description
Inter channel shortening due to electron accumulation layer near silicon surface is a problem for any segmented p-type and double-sided n-type detectors. The standard approach for inter-strip or inter-pixel isolation is an implanted p-type barrier, implemented as either p-stop or p-spray. We present an alternative approach to the isolation problem, which features alumina deposition as a top passivation layer. The alumina layer forms a negative interface charge with silicon surface that prevents formation of the electron accumulation layer. We test the method with conventional p-type sensors that do not have the p-type barrier between electrodes. The sensors have been reprocessed: the top side silicon oxide passivation is removed, and the alumina layer is deposited. Our measurements prove that the alumina layer provides the inter-electrode isolation.
| APS member ID | 60029561 |
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Primary authors
Hartmut Sadrozinski
(SCIPP- UC Santa Cruz)
Vitaliy Fadeyev
(SCIPP, UCSC)
Zachary Galloway
(SCIPP, UCSC)
